2SK3158 silicon n channel mos fet high speed power switching ade-208-757a(z) target specification, 2nd. edition dec. 1, 1998 features low on-resistance r ds =35m w typ. high speed switching 4v gate drive device can be driven from 5v source outline to?20ab 1 2 3 1. gate 2. drain(flange) 3. source d g s
2SK3158 2 absolute maximum ratings (ta = 25 c) item symbol ratings unit drain to source voltage v dss 150 v gate to source voltage v gss 20 v drain current i d 30 a drain peak current i d(pulse) note1 120 a body-drain diode reverse drain current i dr 30 a avalanche current i ap note3 30 a avalanche energy e ar note3 67 mj channel dissipation pch note2 100 w channel temperature tch 150 c storage temperature tstg C55 to +150 c note: 1. pw 10 m s, duty cycle 1 % 2. value at tc = 25 c 3. value at tch = 25 c, rg 3 50 w
2SK3158 3 electrical characteristics (ta = 25 c) item symbol min typ max unit test conditions drain to source breakdown voltage v (br)dss 150 v i d = 10ma, v gs = 0 gate to source breakdown voltage v (br)gss 20v i g = 100 m a, v ds = 0 gate to source leak current i gss 10 m av gs = 16v, v ds = 0 zero gate voltage drain current i dss 10 m av ds = 150 v, v gs = 0 gate to source cutoff voltage v gs(off) 1.0 2.5 v i d = 1ma, v ds = 10v static drain to source on state r ds(on) 3545m w i d = 15a, v gs = 10v note4 resistance r ds(on) 4275m w i d = 15a, v gs = 4v note4 forward transfer admittance |y fs | 1830 s i d = 15a, v ds = 10v note4 input capacitance ciss 2600 pf v ds = 10v output capacitance coss 820 pf v gs = 0 reverse transfer capacitance crss 350 pf f = 1mhz turn-on delay time t d(on) 25 ns i d = 15a, v gs = 10v rise time t r 180 ns r l = 2 w turn-off delay time t d(off) 600 ns fall time t f 280 ns bodyCdrain diode forward voltage v df 0.95 v i f = 30a, v gs = 0 bodyCdrain diode reverse recovery time t rr 110 ns i f = 30a, v gs = 0 dif/ dt =50a/ m s note: 4. pulse test
2SK3158 4 package dimensions (unit: mm) 10.16?.2 9.5 8.0 1.26?.15 2.7 max 1.5 max 0.76 ?.1 2.54 ?.5 1.27 18.5 ?.5 7.8 ?.5 f 3.6 + 0.1 ?0.08 hitachi code eiaj jedec to?20ab sc?6 1.27?.1 1.2?.1 15.0 ?.3 6.4 + 0.2 ?0.1 2.79 ?.2 0.5?.1 14.0 ?.5 2.54 ?.5 4.44?.2
2SK3158 5 cautions 1. hitachi neither warrants nor grants licenses of any rights of hitachis or any third partys patent, copyright, trademark, or other intellectual property rights for information contained in this document. hitachi bears no responsibility for problems that may arise with third partys rights, including intellectual property rights, in connection with use of the information contained in this document. 2. products and product specifications may be subject to change without notice. confirm that you have received the latest product standards or specifications before final design, purchase or use. 3. hitachi makes every attempt to ensure that its products are of high quality and reliability. however, contact hitachis sales office before using the product in an application that demands especially high quality and reliability or where its failure or malfunction may directly threaten human life or cause risk of bodily injury, such as aerospace, aeronautics, nuclear power, combustion control, transportation, traffic, safety equipment or medical equipment for life support. 4. design your application so that the product is used within the ranges guaranteed by hitachi particularly for maximum rating, operating supply voltage range, heat radiation characteristics, installation conditions and other characteristics. hitachi bears no responsibility for failure or damage when used beyond the guaranteed ranges. even within the guaranteed ranges, consider normally foreseeable failure rates or failure modes in semiconductor devices and employ systemic measures such as fail- safes, so that the equipment incorporating hitachi product does not cause bodily injury, fire or other consequential damage due to operation of the hitachi product. 5. this product is not designed to be radiation resistant. 6. no one is permitted to reproduce or duplicate, in any form, the whole or part of this document without written approval from hitachi. 7. contact hitachis sales office for any questions regarding this document or hitachi semiconductor products. hitachi, ltd. semiconductor & ic div. nippon bldg., 2-6-2, ohte-machi, chiyoda-ku, tokyo 100-0004, japan tel: tokyo (03) 3270-2111 fax: (03) 3270-5109 copyright ?hitachi, ltd., 1998. all rights reserved. printed in japan. hitachi asia pte. ltd. 16 collyer quay #20-00 hitachi tower singapore 049318 tel: 535-2100 fax: 535-1533 url northamerica : http:semiconductor.hitachi.com/ europe : http://www.hitachi-eu.com/hel/ecg asia (singapore) : http://www.has.hitachi.com.sg/grp3/sicd/index.htm asia (taiwan) : http://www.hitachi.com.tw/e/product/sicd_frame.htm asia (hongkong) : http://www.hitachi.com.hk/eng/bo/grp3/index.htm japan : http://www.hitachi.co.jp/sicd/indx.htm hitachi asia ltd. taipei branch office 3f, hung kuo building. no.167, tun-hwa north road, taipei (105) tel: <886> (2) 2718-3666 fax: <886> (2) 2718-8180 hitachi asia (hong kong) ltd. group iii (electronic components) 7/f., north tower, world finance centre, harbour city, canton road, tsim sha tsui, kowloon, hong kong tel: <852> (2) 735 9218 fax: <852> (2) 730 0281 telex: 40815 hitec hx hitachi europe ltd. electronic components group. whitebrook park lower cookham road maidenhead berkshire sl6 8ya, united kingdom tel: <44> (1628) 585000 fax: <44> (1628) 778322 hitachi europe gmbh electronic components group dornacher stra? 3 d-85622 feldkirchen, munich germany tel: <49> (89) 9 9180-0 fax: <49> (89) 9 29 30 00 hitachi semiconductor (america) inc. 2000 sierra point parkway brisbane, ca 94005-1897 tel: <1> (800) 285-1601 fax: <1> (303) 297-0447 for further information write to:
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